IEC 62047-47:2024规定了测量硅基微机电系统（MEMS）中使用的微加工技术制造的微结构弯曲强度的要求和测试方法。 本文件适用于微电子技术工艺和其他微机械加工技术制造的微结构的原位弯曲强度测量。 随着器件的缩放，由缺陷和污染引起的弯曲强度退化变得更加严重。本文规定了一种基于MEMS技术的弯曲强度原位测试方法。该文件不需要复杂的仪器（如扫描探针显微镜和纳米压头）和特殊的测试样本。 由于本文中的原位片上测试仪和器件是在同一片晶圆上用相同的工艺制作的，因此本文可以为设计部分提供一定的实际参考。

IEC 62047-47:2024 specifies the requirements and testing method to measure the bending strength of microstructures which are fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS).
This document is applicable to the in-situ bending strength measurement of microstructures manufactured by microelectronic technology process and other micromachining technology.
With the devices scaling, the bending strength degradation, induced by defects and contaminations, becomes more severe. This document specifies an in-situ testing method of the bending strength based on MEMS technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and special test specimens.
Since in-situ on-chip tester in this document and device are fabricated with the same process on the same wafer, this document can give some practical reference for the design part.