IEC 60749-34-1:20 25描述了一种测试方法，该测试方法用于确定功率半导体模块承受由循环内部半导体和内部连接器的功率耗散引起的热应力和机械应力的能力。它基于IEC 60749-34，但专门为功率半导体模块产品开发，包括绝缘栅双极晶体管（IGBT）、金属氧化物半导体场效应晶体管（MOSFET）、二极管和晶闸管。 如果客户要求单独使用或特定应用指南（例如ECPE指南AQG 324），测试方法的细节可以基于这些要求，如果它们偏离本文档的内容。 该测试导致磨损，被认为是破坏性的。

IEC 60749-34-1:2025 describes a test method that is used to determine the capability of power semiconductor modules to withstand thermal and mechanical stress resulting from cycling the power dissipation of the internal semiconductors and the internal connectors. It is based on IEC 60749-34, but is developed specifically for power semiconductor module products, including insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), diode and thyristor.
If there is a customer request for an individual use or an application specific guideline (for example ECPE Guideline AQG 324), details of the test method can be based on these requirements if they deviate from the content of this document.
This test caused wear-out and is considered destructive.